BCM857BV Datasheet, PDF (3/15 Pages) NXP Semiconductors – PNP/PNP matched double transistors

NXP Semiconductors
BCM857BV/BS/DS
PNP/PNP matched double transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
open emitter
open base
open collector
single pulse;
t_p ≤ 1 ms
T_amb ≤ 25 °C
-
-
-
-
-
[1][2] _-
SOT363
[1] _-
SOT457
[1] _-
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT666
[1][2] _-
SOT363
[1] _-
SOT457
[1] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
−50
V
−45
V
−5
V
−100 mA
−200 mA
200
mW
200
mW
250
mW
300
mW
300
mW
380
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
SOT666
SOT363
SOT457
Conditions
in free air
Min Typ Max Unit
[1][2] _-
-
625 K/W
[1] _-
-
625 K/W
[1] _-
-
500 K/W
BCM857BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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