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BCM857BV Datasheet, PDF (4/15 Pages) NXP Semiconductors – PNP/PNP matched double transistors | |||
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NXP Semiconductors
BCM857BV/BS/DS
PNP/PNP matched double transistors
Table 7. Thermal characteristics â¦continued
Symbol Parameter
Conditions
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
SOT363
SOT457
Min Typ Max
[1][2] -
-
416
[1] -
-
416
[1] -
-
328
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reï¬ow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed
Symbol
Parameter
Conditions
Per transistor
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
collector capacitance
VCB = â30 V;
IE = 0 A
VCB = â30 V;
IE = 0 A;
Tj = 150 °C
VEB = â5 V;
IC = 0 A
VCE = â5 V;
IC = â10 µA
VCE = â5 V;
IC = â2 mA
IC = â10 mA;
IB = â0.5 mA
IC = â100 mA;
IB = â5 mA
IC = â10 mA;
IB = â0.5 mA
IC = â100 mA;
IB = â5 mA
VCE = â5 V;
IC = â2 mA
VCE = â5 V;
IC = â10 mA
VCB = â10 V;
IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = â0.5 V;
IC = ic = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
â15 nA
-
-
â5
µA
-
-
â100 nA
-
250 -
200 290 450
-
â50 â200 mV
-
â200 â400 mV
[1] -
â760 -
mV
[1] -
â920 -
mV
[2] â600 â650 â700 mV
[2] -
-
â760 mV
-
-
2.2
pF
-
10
-
pF
BCM857BV_BS_DS_6
Product data sheet
Rev. 06 â 28 August 2009
© NXP B.V. 2009. All rights reserved.
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