BC868 Datasheet, PDF (5/9 Pages) NXP Semiconductors – NPN medium power transistor

NXP Semiconductors
NPN medium power transistor;
20 V, 1 A
Product data sheet
BC868
2 mm
handbook, halfpage
32 mm
2.8 mm
3.5 mm
1.8 mm _1.1
mm
0.7 mm
0.8 mm
3.7 mm
MLE321
Fig.3 SOT89 standard mounting conditions for
reflow soldering.
10 mm
40 mm
2.5 mm
0.5 mm
3.96 mm
10 mm
1 mm
5 mm
1.6 mm
MLE322
Fig.4 Printed-circuit board for SOT89; mounting
pad for collector 1 cm².
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BE
C_c
f_T
collector-base cut-off current
emitter-base cut-off current
DC current gain
V_CB = 25 V; I_E = 0 A
V_CB = 25 V; I_E = 0 A; T_j = 25 °C
V_EB = 5 V; I_C = 0 A
BC868
DC current gain
V_CE = 10 V; I_C = 5 mA
V_CE = 1 V; I_C = 500 mA
V_CE = 1 V; I_C = 1 A
BC868-25
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
V_CE = 1 V; I_C = 500 mA
I_C = 1 A; I_B = 100 mA
V_CE = 10 V; I_C = 5 mA
V_CE = 1 V; I_C = 1 A
I_E = i_e = 0 A; V_CB = 10 V;
f = 1 MHz
transition frequency
V_CE = 5 V; I_C = 50 mA;
f = 100 MHz
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
100 nA
10
μA
100 nA
50
−
−
85
−
375
60
−
−
160 −
−
−
−
−
−
−
−
22
375
500 mV
700 mV
1
V
−
pF
40
170 −
MHz
2004 Nov 08
5