BC868 Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN medium power transistor

NXP Semiconductors
NPN medium power transistor;
20 V, 1 A
Product data sheet
BC868
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_th(j-a)
R_th(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
T_amb ≤ 25 °C
notes 1 and 2
notes 1 and 3
notes 1 and 4
T_amb ≤ 25 °C
250
K/W
147
K/W
104
K/W
20
K/W
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
10³
handbook, full pagewidth
Zth
(K/W)
(1)
10² (2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
1 ⁽¹⁰⁾
MLE324
P
δ
=
tp
T
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm².
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ =0.01.
(10) δ = 0.
tp
t
T
10²
10³
tp (s)
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 08
4