BC868 Datasheet, PDF (3/9 Pages) NXP Semiconductors – NPN medium power transistor

NXP Semiconductors
NPN medium power transistor;
20 V, 1 A
Product data sheet
BC868
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
notes 1 and 2
notes 1 and 3
notes 1 and 4
MIN.
−
−
−
−
−
−
MAX.
32
20
5
1
2
200
UNIT
V
V
V
A
A
mA
−
0.5
W
−
0.85
W
−
1.2
W
−65
+150
°C
−
150
°C
−65
+150
°C
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
handbook¹, ^.h⁶alfpage
Ptot
(W)
(1)
1.2
(2)
0.8
(3)
0.4
MLE323
0
-65
-5
55
115
175
Tamb (°C)
(1) FR4 PCB; 6 cm² mounting pad for collector.
(2) FR4 PCB; 1 cm² mounting pad for collector.
(3) Standard footprint.
Fig.1 Power derating curves.
2004 Nov 08
3