BC857BV Datasheet, PDF (5/8 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
PNP general purpose double transistor
Product data sheet
BC857BV
Graphical information BC857BV
1000
handbook, halfpage
hFE
800
MHB975
600
(1)
400
(2)
200
(3)
0
−10^−2 −10^−1
1
10
10²
10³
IC (mA)
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.2 DC current gain; typical values.
−1200
hand_Vb_Boo_Ek, halfpage
(mV)
−1000
MHB976
−800
(1)
−600
(2)
−400
(3)
−200
−−010_{−2 −10−1}
−1
V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10
−10²
−10³
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−10⁴
handbook, halfpage
VCEsat
(mV)
−10³
MHB977
−10²
(1)
−1_−010_−1
(2)
(3)
−1
−10
−10²
−10³
IC (mA)
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
han_Vd_Bb_Eoo_sk_a, _thalfpage
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
MHB978
−200
0
−10^−1
−1
−10
−10²
−10³
IC (mA)
I_C/I_B 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5