BC857BV Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
PNP general purpose double transistor
Product data sheet
BC857BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
P_tot
total power dissipation
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
MIN.
MAX.
UNIT
−
−50
V
−
−45
V
−
−5
V
−
−100
mA
−
−200
mA
−
−200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
VALUE
416
UNIT
K/W
2001 Nov 07
3