BC857BV Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
PNP general purpose double transistor
Product data sheet
BC857BV
CHARACTERISTICS
T_amb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
I_CBO
collector-base cut-off current
I_EBO
h_FE
V_BE
V_CEsat
V_BEsat
C_c
C_e
f_T
emitter-base cut-off current
DC current gain
base-emitter voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
Note
1. Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN. TYP. MAX. UNIT
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5. mA; note 1
I_C = −10 mA; I_B = −0.5 mA
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
I_C = i_c = 0; V_EB = −500 mV;
f = 1 MHz
I_C = −10 mA; V_CE = −5 V;
f = 100 MHz
−
−
−
200
−600
−
−
−
−
−
100
−
−
−
−
−655
−
−
−755
−
10
−
−15
−5
−100
450
−750
−100
−400
−
2.2
−
−
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
2001 Nov 07
4