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| BAV756S Datasheet, PDF (5/15 Pages) NXP Semiconductors – High-speed switching diode array | |||
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NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 7.
Symbol
Rth(j-sp)
Thermal characteristics â¦continued
Parameter
Conditions
thermal resistance from
junction to solder point
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
Min Typ Max Unit
-
-
255 K/W
-
-
360 K/W
-
-
255 K/W
-
-
350 K/W
-
-
300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reï¬ow soldering is the only recommended soldering method.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min Typ
Per diode
VF
forward voltage
[1]
IF = 1 mA
-
-
IF = 10 mA
-
-
IF = 50 mA
IF = 150 mA
-
-
-
-
IR
reverse current
VR = 25 V
-
-
VR = 80 V
-
-
VR = 25 V; Tj = 150 °C -
-
VR = 80 V; Tj = 150 °C -
-
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
-
trr
reverse recovery time
[2] -
-
VFR
forward recovery voltage
[3] -
-
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 â¦; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
0.5 µA
30 µA
150 µA
2
pF
4
ns
1.75 V
BAV756S_BAW56_SER_5
Product data sheet
Rev. 05 â 26 November 2007
© NXP B.V. 2007. All rights reserved.
5 of 15
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