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| BAV756S Datasheet, PDF (1/15 Pages) NXP Semiconductors – High-speed switching diode array | |||
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BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 â 26 November 2007
Product data sheet
1. Product proï¬le
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV756S
SOT363 SC-88
BAW56
BAW56M
SOT23
SOT883
-
SC-101
BAW56S
SOT363 SC-88
BAW56T
BAW56W
SOT416
SOT323
SC-75
SC-70
JEDEC
-
Package
conï¬guration
very small
TO-236AB small
-
leadless ultra
small
-
very small
-
ultra small
-
very small
Conï¬guration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
1.2 Features
I High switching speed: trr ⤠4 ns
I Low leakage current
I Small SMD plastic packages
I Low capacitance: Cd ⤠2 pF
I Reverse voltage: VR ⤠90 V
1.3 Applications
I High-speed switching
I General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
Conditions
Min Typ
VR = 80 V
-
-
-
-
[1] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 â¦; measured at IR = 1 mA.
Max
0.5
90
4
Unit
µA
V
ns
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