BAS716_12 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS716
10²
handbook, halfpage
IR
(nA)
10
1
MDB826
(1)
(2)
10^−1
0
50
100
150 _{Tj (°C)} 200
V_R = 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5 Reverse current as a function of junction
temperature.
handbook², ^.h⁰alfpage
Cd
(pF)
1.5
MDB827
1.0
0.5
0
0
5
10
15 _{VR (V)} 20
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R _S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R _i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t _rr
t
(1)
output signal
(1) I_R = 1 mA.
Input signal: reverse pulse rise time t_r = 0.6 ns; reverse voltage pulse duration t_p = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t_r = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Nov 07
5