BAS716_12 Datasheet, PDF (2/9 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS716
FEATURES
• Plastic SMD package
• Low leakage current: typ. 0.2 nA
• Switching time: typ. 0.6 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATION
• Low leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in an ultra small SOD523 (SC-79) SMD
plastic package.
PINNING
PIN
1
;²
handbook, halfpage₁
Top view
DESCRIPTION
cathode
anode
2
MAM408
Marking code: S1.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
ORDERING INFORMATION
TYPE NUMBER
BAS716
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD523
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F
I_FRM
I_FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2; note 1
repetitive peak forward current
non-repetitive peak forward current square wave; T_j = 25 °C prior to surge;
see Fig.4
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
t_p = 1 µs
t_p = 1 ms
t_p = 1 s
T_amb = 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
MAX.
85
75
200
500
4
1
0.5
250
+150
150
UNIT
V
V
mA
mA
A
A
A
mW
°C
°C
2003 Nov 07
2