BAS716_12 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS716
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
CONDITIONS
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
V_R = 75 V
V_R = 75 V; T_j = 150 °C
V_R = 100 V
V_R = 0 V; f = 1 MHz; see Fig.6
when switched from I_F = 10 mA to
I_R = 10 mA; R_L = 100 Ω; measured at
I_R = 1 mA
TYP.
0.77
0.85
0.92
1.02
0.2
3
0.3
2
0.6
MAX.
0.9
1
1.1
1 .25
5
80
−
−
3
UNIT
V
V
V
V
nA
nA
nA
pF
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point note 2
450
K/W
120
K/W
Notes
1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.
2. Soldering point of the cathode tab.
2003 Nov 07
3