BAS416 Datasheet, PDF (5/8 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS416
handboo¹k,⁰h²alfpage
IR
(nA)
10
(1)
MLB754
1
10 ¹
10 ²
(2)
10 ³
0
50
V_R = 75 V.
(1) Maximum values.
(2) Typical values.
100
150 _{T j (oC)} 200
Fig.5 Reverse current as a function of
junction temperature.
2
handbook, halfpage
Cd
(pF)
1
MBG526
0
0
5
10
15 _{VR (V)} 20
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function
of reverse voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R _S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R _i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t _rr
t
(1)
output signal
(1) I_R = 1 mA.
Input signal: reverse pulse rise time t_r = 0.6 ns; reverse voltage pulse duration t_p = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t_r = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2004 Jan 26
5