BAS416 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS416
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
CONDITIONS
see Fig.3
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
see Fig.5
V_R = 75 V
V_R = 75 V; T_j = 150 °C
V_R = 0; f = 1 MHz; see Fig.6
when switched from I_F = 10 mA to
I_R = 10 mA; R_L = 100 Ω;
measured at I_R = 1 mA; see Fig.7
TYP. MAX. UNIT
−
0.9
V
−
1
V
−
1.1
V
−
1.25
V
0.003 5
nA
3
80
nA
2
−
pF
0.8
3
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
CONDITIONS
note 1
VALUE UNIT
450
K/W
2004 Jan 26
3