BAS416 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS416
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• Low-leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
handbook, halfp₁age
2
MAM406
Marking code: D4.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) (SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BAS416
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
T_stg
T_j
PARAMETER
CONDITIONS
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2
repetitive peak forward current
non-repetitive peak forward current square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
total power dissipation
storage temperature
T_amb = 25 °C; note 1
junction temperature
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
85
75
200
500
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
250
mW
−65
+150 °C
−
150
°C
2004 Jan 26
2