74HC3GU04 Datasheet, PDF (5/16 Pages) NXP Semiconductors – Inverter

NXP Semiconductors
74HC3GU04
Inverter
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ^[1] Max
t_t
transition time nY; see Figure 5
[3]
V_CC = 2.0 V
-
18
95
V_CC = 4.5 V
-
6
19
V_CC = 6.0 V
C_PD
power dissipation V_I = GND to V_CC
capacitance
-
[4]
-
5
16
5
-
−40 °C to +125 °C Unit
Min
Max
-
125 ns
-
25 ns
-
20 ns
-
-
pF
[1] All typical values are measured at T_amb = 25 °C.
[2] t_pd is the same as t_PLH and t_PHL.
[3] t_t is the same as t_TLH and t_THL.
[4] C_PD is used to determine the dynamic power dissipation (P_D in μW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of outputs.
12. Waveforms
V_I
nA input
GND
V_OH
nY output
V_OL
V_M
t _PHL
V_M
t _THL
V_M
V_M
10 %
t _PLH
90 %
t _TLH
mna722
Measurement points are given in Table 9.
Fig 5. Propagation delay data input (nA) to data output (nY) and transition time output (nY)
Table 9. Measurement points
Type
74HC3GU04
Input
V_M
0.5 × V_CC
Output
V_M
0.5 × V_CC
74HC3GU04_4
Product data sheet
Rev. 04 — 11 January 2010
© NXP B.V. 2010. All rights reserved.
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