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74HC3GU04 Datasheet, PDF (4/16 Pages) NXP Semiconductors – Inverter
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NXP Semiconductors
74HC3GU04
Inverter
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VIH
HIGH-level input
VCC = 2.0 V
voltage
VCC = 4.5 V
VCC = 6.0 V
VIL
LOW-level input
VCC = 2.0 V
voltage
VCC = 4.5 V
VCC = 6.0 V
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = −20 μA; VCC = 2.0 V
IO = −20 μA; VCC = 4.5 V
IO = −20 μA; VCC = 6.0 V
IO = −4.0 mA; VCC = 4.5 V
IO = −5.2 mA; VCC = 6.0 V
VOL
LOW-level output
VI = VIH or VIL
voltage
IO = 20 μA; VCC = 2.0 V
IO = 20 μA; VCC = 4.5 V
IO = 20 μA; VCC = 6.0 V
IO = 4.0 mA; VCC = 4.5 V
IO = 5.2 mA; VCC = 6.0 V
II
input leakage current VI = VCC or GND; VCC = 6.0 V
ICC
supply current
per input pin; VI = VCC or GND;
IO = 0 A; VCC = 6.0 V
CI
input capacitance
−40 °C to +85 °C
Min Typ[1] Max
1.7 1.1
-
3.6 2.4
-
4.8 3.1
-
-
0.9 0.3
-
2.1 0.9
-
2.9 1.2
1.9 2.0
-
4.4 4.5
-
5.9 6.0
-
4.13 4.32 -
5.63 5.81 -
-
0 0.1
-
0 0.1
-
0 0.1
- 0.15 0.33
- 0.16 0.33
-
- ±1.0
-
-
10
-
3.0
-
[1] All typical values are measured at Tamb = 25 °C.
−40 °C to +125 °C Unit
Min
Max
1.7
-
V
3.6
-
V
4.8
-
V
-
0.3 V
-
0.9 V
-
1.2 V
1.9
-
V
4.4
-
V
5.9
-
V
3.7
-
V
5.2
-
V
-
0.1 V
-
0.1 V
-
0.1 V
-
0.4 V
-
0.4 V
-
±1.0 μA
-
20
μA
-
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
tpd
propagation delay nA to nY; see Figure 5
[2]
VCC = 2.0 V
-
13
75
VCC = 4.5 V
-
6
15
VCC = 6.0 V
-
5
13
−40 °C to +125 °C Unit
Min
Max
-
90 ns
-
18 ns
-
15 ns
74HC3GU04_4
Product data sheet
Rev. 04 — 11 January 2010
© NXP B.V. 2010. All rights reserved.
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