74HC21 Datasheet, PDF (5/14 Pages) NXP Semiconductors – Dual 4-input AND gate

NXP Semiconductors
74HC21
Dual 4-input AND gate
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; test circuit see Figure 8.
Symbol Parameter Conditions
25 °C
Min Typ Max
t_pd
propagation nA, nB, nC or nD to nY; ^[1]
delay
see Figure 7
V_CC = 2.0 V
- 33 110
V_CC = 4.5 V
- 12 22
V_CC = 6.0 V
- 10 19
V_CC = 5.0 V; C_L = 15 pF
- 10 -
t_t
transition time nY output; see Figure 7 ^[2]
V_CC = 2.0 V
- 19 75
V_CC = 4.5 V
- 7 15
V_CC = 6.0 V
C_PD
power
V_I = GND to V_CC
dissipation
capacitance
-
[3] _-
6 13
15 -
−40 °C to +85 °C
Min
Max
-
140
-
28
-
24
-
-
-
95
-
19
-
16
-
-
−40 °C to +125 °C Unit
Min
Max
-
165 ns
-
33 ns
-
28 ns
-
- ns
-
110 ns
-
22 ns
-
19 ns
-
- pF
[1] t_pd is the same as t_PHL and t_PLH.
[2] t_t is the same as t_THL and t_TLH.
[3] C_PD is used to determine the dynamic power dissipation (P_D in µW):
P_D = C_PD × V_CC2 × f_i × N + ∑ (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
∑ (C_L × V_CC2 × f_o) = sum of outputs.
74HC21_5
Product data sheet
Rev. 05 — 7 May 2009
© NXP B.V. 2009. All rights reserved.
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