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74HC00 Datasheet, PDF (5/15 Pages) NXP Semiconductors – Quad 2-input NAND gate
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NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
74HCT00
VIH
HIGH-level
VCC = 4.5 V to 5.5 V
input voltage
- 1.6 -
2.0
-
2.0
-V
VIL
LOW-level
VCC = 4.5 V to 5.5 V
input voltage
- 1.2 -
-
0.8
-
0.8 V
VOH
HIGH-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
IO = −20 μA
- 4.5 -
4.4
-
4.4
IO = −4.0 mA
- 4.32 - 3.84
-
3.7
VOL
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
IO = 20 μA; VCC = 4.5 V
-
0
-
-
0.1
-
IO = 5.2 mA; VCC = 6.0 V
- 0.15 -
-
0.33
-
II
input leakage VI = VCC or GND;
current
VCC = 6.0 V
-
-
-
-
±1
-
ICC
supply current VI = VCC or GND; IO = 0 A;
-
-
-
-
20
-
VCC = 6.0 V
ΔICC additional
per input pin;
- 150 -
-
675
-
supply current VI = VCC − 2.1 V; IO = 0 A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
CI
input
capacitance
- 3.5 -
-
-
-
-V
-V
0.1 V
0.4 V
±1 μA
40 μA
735 μA
- pF
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
74HC00
tpd
propagation delay nA, nB to nY; see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V
tt
transition time
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation per package; VI = GND to VCC
capacitance
25 °C
−40 °C to +125 °C Unit
Min Typ Max Max
Max
(85 °C) (125 °C)
[1]
-
25
-
115
135 ns
-
9
-
23
27 ns
-
7
-
-
- ns
-
7
-
20
23 ns
[2]
-
19
-
-
7
-
-
6
-
[3]
-
22
-
95
110 ns
19
22 ns
16
19 ns
-
- pF
74HC_HCT00_4
Product data sheet
Rev. 04 — 11 January 2010
© NXP B.V. 2010. All rights reserved.
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