74HC00 Datasheet, PDF (4/15 Pages) NXP Semiconductors – Quad 2-input NAND gate

NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
Table 5. Recommended operating conditions …continued
Voltages are referenced to GND (ground = 0 V) …continued
Symbol Parameter
Conditions
74HC00
Min Typ Max
Δt/ΔV
input transition rise and fall rate
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
-
-
625
-
1.67 139
-
-
83
74HCT00
Min Typ Max
-
-
-
-
1.67 139
-
-
-
Unit
ns/V
ns/V
ns/V
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
74HC00
V_IH
HIGH-level
V_CC = 2.0 V
input voltage _{VCC = 4.5 V}
- 1.2 -
1.5
-
1.5
-V
- 2.4 - 3.15
-
3.15
-V
V_CC = 6.0 V
- 3.2 -
4.2
-
4.2
-V
V_IL
LOW-level
V_CC = 2.0 V
input voltage _{VCC = 4.5 V}
- 0.8 -
-
0.5
-
0.5 V
- 2.1 -
-
1.35
-
1.35 V
V_CC = 6.0 V
- 2.8 -
-
1.8
-
1.8 V
V_OH
HIGH-level
V_I = V_IH or V_IL
output voltage
I_O = −20 μA; V_CC = 2.0 V
-
2.0
-
1.9
-
1.9
-V
I_O = −20 μA; V_CC = 4.5 V
-
4.5
-
4.4
-
4.4
-V
I_O = −20 μA; V_CC = 6.0 V
-
6.0
-
5.9
-
5.9
-V
I_O = −4.0 mA; V_CC = 4.5 V - 4.32 -
3.84
-
3.7
-V
I_O = −5.2 mA; V_CC = 6.0 V - 5.81 -
5.34
-
5.2
-V
V_OL
LOW-level
V_I = V_IH or V_IL
output voltage
I_O = 20 μA; V_CC = 2.0 V
-
0
-
-
0.1
-
0.1 V
I_O = 20 μA; V_CC = 4.5 V
-
0
-
-
0.1
-
0.1 V
I_O = 20 μA; V_CC = 6.0 V
-
0
-
-
0.1
-
0.1 V
I_O = 4.0 mA; V_CC = 4.5 V
- 0.15 -
-
0.33
-
0.4 V
I_O = 5.2 mA; V_CC = 6.0 V
- 0.16 -
-
0.33
-
0.4 V
I_I
input leakage V_I = V_CC or GND;
current
V_CC = 6.0 V
-
-
-
-
±1
-
±1 μA
I_CC
supply current V_I = V_CC or GND; I_O = 0 A;
-
-
-
-
20
-
40 μA
V_CC = 6.0 V
C_I
input
capacitance
- 3.5 -
-
-
-
- pF
74HC_HCT00_4
Product data sheet
Rev. 04 — 11 January 2010
© NXP B.V. 2010. All rights reserved.
4 of 15