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PZU13B2-115 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Single Zener diodes in a SOD323F package Rev. 02 — 15 November 2009
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 8. Characteristics per type; PZU2.4B to PZU5.6B3
Tj = 25 °C unless otherwise specified
PZU
xxx
Sel Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential
resistance
rdif (Ω)
Reverse
current
IR (μA)
Min Max IZ = 0.5 mA IZ = 5 mA Max VR (V)
2.4 B 2.3 2.6 1000
100
50 1
Temperature Diode
coefficient capacitance
SZ (mV/K);
IZ = 5 mA
Cd (pF)[1]
Typ
Max
−1.6
450
Non-repetitive peak
reverse current
IZSM (A)[2]
Max
8
2.7 B 2.5 2.9 1000
100
20 1
−2.0
440
8
B1 2.5 2.75
B2 2.65 2.9
3.0 B 2.80 3.20 1000
95
10 1
−2.1
425
8
B1 2.80 3.05
B2 2.95 3.20
3.3 B 3.10 3.50 1000
95
5
1
−2.4
410
8
B1 3.10 3.35
B2 3.25 3.50
3.6 B 3.40 3.80 1000
90
5
1
−2.4
390
8
B1 3.40 3.65
B2 3.55 3.80
3.9 B 3.70 4.10 1000
90
3
1
−2.5
370
8
B1 3.70 3.97
B2 3.87 4.10
4.3 B 4.01 4.48 1000
90
3
1
−2.5
350
8
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48
4.7 B 4.42 4.90 800
80
2
1
−1.4
325
8
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.90
5.1 B 4.84 5.37 250
60
2
1.5 0.3
300
5.5
B1 4.84 5.04
B2 4.98 5.20
B3 5.14 5.37
5.6 B 5.31 5.92 100
40
1
2.5 1.9
275
5.5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 μs; square wave; Tj = 25 °C prior to surge
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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