PZU13B2-115 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Single Zener diodes in a SOD323F package Rev. 02 — 15 November 2009

NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
I_F
forward current
-
I_ZSM
non-repetitive peak reverse
-
current
P_ZSM
non-repetitive peak reverse
[1] _-
power dissipation
P_tot
total power dissipation
T_amb ≤ 25 °C ^[2] -
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max
Unit
200
mA
see Table 8
and 9
40
W
310
mW
550
mW
150
°C
+150
°C
+150
°C
[1] t_p = 100 μs; square wave; T_j = 25 °C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm².
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
400 K/W
[2] _-
-
230 K/W
[3] _-
-
55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm².
[3] Soldering point of cathode tab
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
V_F
forward voltage I_F = 10 mA
I_F = 100 mA
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02
Min
Typ
Max Unit
[1] _-
-
0.9
V
[1] _-
-
1.1
V
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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