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| PSMN8R7-80PS Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 | |||
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NXP Semiconductors
PSMN8R7-80PS
N-channel 80 V 8.7 m⦠standard level MOSFET in TO-220
103
ID
Limit RDSon = VDS / ID
(A)
102
10
1
10-1
1
DC
10
10 μs
100 μs
003aad387
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
Min Typ Max Unit
-
0.54 0.88 K/W
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10-1 0.1
0.05
0.02
10-2
003aad355
P
δ = tp
T
10-3
single shot
10-4
10-6
10-5
10-4
10-3
10-2
tp
T
10-1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN8R7-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 29 January 2010
© NXP B.V. 2010. All rights reserved.
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