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PSMN8R7-80PS Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
Rev. 01 — 29 January 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Tj
junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 90 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V;
see Figure 14 and 15
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 15 A;
on-state resistance Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
[1]
Tj = 25 °C; see Figure 13
[1] Measured 3 mm from package.
Min Typ Max Unit
-
-
80 V
-
-
90 A
-
-
170 W
-55 -
175 °C
-
-
120 mJ
-
11.6 -
nC
-
52 -
nC
-
-
14 mΩ
-
7.5 8.7 mΩ
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