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PSMN3R3-60PL Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
NXP Semiconductors
103
IAL
(A)
102
10
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
003aak804
(1)
(2)
1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
1
Limit RDSon = VDS / ID
DC
003aak805
tp = 10 us
100 us
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in still air
PSMN3R3-60PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2013
Min Typ Max Unit
-
0.4 0.51 K/W
-
60
-
K/W
© NXP B.V. 2013. All rights reserved
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