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| PSMN3R3-60PL Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 | |||
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PSMN3R3-60PL
N-channel 60 V, 3.4 m⦠logic level MOSFET in SOT78
7 February 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design
and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
⢠High efficiency due to low switching & conduction losses
⢠Robust construction for demanding applications
⢠Logic level gate
3. Applications
⢠Battery-powered tools
⢠Load switching
⢠Motor control
⢠Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
[1]
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QG(tot)
QGD
total gate charge
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 48 V;
Fig. 13; Fig. 14
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 130 A; Vsup ⤠60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
60
V
-
-
130 A
-
-
293 W
-
2.7 3.4 mΩ
-
175 -
nC
-
31
-
nC
-
-
372 mJ
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