PSMN3R3-60PL Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78

NXP Semiconductors
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
Symbol
Parameter
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
T_mb = 25 °C; Fig. 2
T_mb = 25 °C
[1]
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 130 A; V_sup ≤ 60 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped;
Fig. 3
[1] Continuous current is limited by package.
200
I_D
(A)
160
(1)
120
003aak803
120
P_der
(%)
80
Min Max Unit
-
293 W
-55 175 °C
-55 175 °C
-
130 A
-
793 A
-
372 mJ
03aa16
80
40
40
Fig. 1.
0
0
30
60
90 120 150 180
T_j (°C)
(1) Capped at 130A due to package
Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R3-60PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2013
© NXP B.V. 2013. All rights reserved
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