PSMN035-150P Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
120
P_der
(%)
80
40
03aa16
10²
I_AS
(A)
003aaa017
25 °C
10
T_j prior to avalanche = 150 °C
0
0
50
100
150
200
T_mb (°C)
1
10^−3
10^−2
10^−1
1
10
t_p (ms)
Fig 3. Normalized total power dissipation as a
function of mounting base temperature
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration
PSMN035-150P_4
Product data sheet
Rev. 04 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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