PSMN035-150P Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
150 V
T_mb = 25 °C; see Figure 1 and 2 -
-
50
-
-
-
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 3
-
-
-
W
Dynamic characteristics
Q_GD
gate-drain charge
Static characteristics
V_GS = 10 V; V_DS = 120 V;
T_j = 25 °C; see Figure 13
-
33 45 nC
R_DSon drain-source
V_GS = 10 V; I_D = 25 A;
-
on-state resistance T_j = 25 °C; see Figure 11 and 12
30 35 mΩ