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| PSMN035-150P Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
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NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⤠175 °C; Tj ⥠25 °C; RGS = 20 kâ¦
Tmb = 100 °C; see Figure 1 and 2
Tmb = 25 °C; see Figure 1 and 2
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 2
Tmb = 25 °C; see Figure 3
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 47 A; Vsup ⤠50 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 â¦; see Figure 4
energy
IAS
non-repetitive
Vsup ⤠50 V; VGS = 10 V; Tj(init) = 25 °C;
avalanche current
RGS = 50 â¦; unclamped; see Figure 4
Min Max Unit
-
150 V
-
150 V
-20 20
V
-
36
A
-
50
A
-
200 A
-
250 W
-55 175 °C
-55 175 °C
-
50
A
-
200 A
-
460 mJ
-
50
A
120
Ider
(%)
80
03aa24
40
0
0
50
100
150
200
Tmb (°C)
103
ID
(A)
RDSon = VDS/ ID
102
003aaa016
tp = 10 μs
10 P
tp
d=T
tp
t
T
1
1
10
D.C.
100 μs
1 ms
10 ms
100 ms
102 VDS (V) 103
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Safe operating area; continuous and peak drain
currents as a function of drain-source volt
PSMN035-150P_4
Product data sheet
Rev. 04 â 16 November 2009
© NXP B.V. 2009. All rights reserved.
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