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PMEG3010EB Datasheet, PDF (4/9 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier
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NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
104
IF
(mA)
103
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102
10
(1)
(2)
(3)
1
(4)
(5)
10−1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
40
Cd
(pF)
30
105
IR
(µA)
104
103
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(1)
(2)
(3)
102
(4)
10
1
10−1
10−2
10−3
0
(5)
5
10
15
20
25
30
VR (V)
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = −40 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values
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20
10
0
0
10
20
30
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG3010EB_1
Product data sheet
Rev. 01 — 1 December 2006
© NXP B.V. 2006. All rights reserved.
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