PMEG3010EB Datasheet, PDF (2/9 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3010EB
1 A very low V_F MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
1
2
Symbol
1
2
sym001
Table 3. Ordering information
Type number
Package
Name
Description
PMEG3010EB
SC-79
plastic surface-mounted package; 2 leads
Version
SOD523
4. Marking
Table 4. Marking codes
Type number
PMEG3010EB
Marking code
KA
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
reverse voltage
-
I_F
forward current
T_sp ≤ 55 °C
-
I_FRM
repetitive peak forward current t_p ≤ 1 ms;
-
δ ≤ 0.25
I_FSM
P_tot
T_j
T_amb
T_stg
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
square wave;
t_p = 8 ms
T_amb ≤ 25 °C
-
[1] _-
-
−65
−65
Max
Unit
30
V
1
A
1
A
3
A
310
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMEG3010EB_1
Product data sheet
Rev. 01 — 1 December 2006
© NXP B.V. 2006. All rights reserved.
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