PMEG3010EB Datasheet, PDF (3/9 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3010EB
1 A very low V_F MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1][2] _-
-
400 K/W
[3] _-
-
75 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering point of cathode tab.
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V_F
forward voltage
[1]
I_F = 0.1 mA
-
90
180
mV
I_F = 1 mA
-
150
200
mV
I_F = 10 mA
-
210
270
mV
I_F = 100 mA
-
295
360
mV
I_F = 500 mA
-
430
500
mV
I_F = 1 A
-
610
680
mV
I_R
reverse current
V_R = 10 V
-
15
200
µA
V_R = 30 V
-
70
500
µA
C_d
diode capacitance V_R = 1 V; f = 1 MHz
-
24
30
pF
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
PMEG3010EB_1
Product data sheet
Rev. 01 — 1 December 2006
© NXP B.V. 2006. All rights reserved.
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