PMEG2010EV Datasheet, PDF (4/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2010EV
GRAPHICAL DATA
10³
handbook, halfpage
IF
(mA)
10²
(1) (2)
(3)
10
MHC311
1
10^−1
0
0.2
0.4
0.6
VF (V)
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
10⁵
handbook, halfpage
IR
(μA)
10⁴
10³
10²
10
MHC312
(1)
(2)
(3)
1
0
5
10
15
20
25
VR (V)
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook,⁸h⁰alfpage
Cd
(pF)
60
MHC313
40
20
0
0
5
10
15
20
VR (V)
f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
4