PMEG2010EV Datasheet, PDF (3/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2010EV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
Notes
1. Refer to SOT666 standard mounting conditions.
2. Mounted on printed circuit-board, 1 cm² copper area.
Soldering
The only recommended soldering method is reflow soldering.
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
continuous forward voltage I_F = 10 mA
I_F = 100 mA
I_F = 1 000 mA; note 1; see Fig.2
I_R
reverse current
V_R = 5 V; note 2
V_R = 8 V; note 2
V_R = 15 V; note 2; see Fig.3
C_d
diode capacitance
V_R = 5 V; f = 1 MHz; see Fig.4
Notes
1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm² copper solder land.
2. Pulse test: t_p = 300 μs; δ = 0.02.
VALUE
405
215
UNIT
K/W
K/W
TYP.
240
300
480
5
7
10
19
MAX.
270
350
550
10
20
50
25
UNIT
mV
mV
mV
μA
μA
μA
pF
2003 Aug 20
3