PMEG2010EV Datasheet, PDF (2/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2010EV
FEATURES
• Forward current: 1 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small SMD package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection in a SOT666 ultra small SMD plastic
package.
PINNING
PIN
1
cathode
2
cathode
3
anode
4
anode
5
cathode
6
cathode
DESCRIPTION
handbook, halfpag6e 5 4
1, 2
5, 6
123
3, 4
MHC310
Marking code: F1.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
V_R
continuous reverse voltage
I_F
continuous forward current
I_FSM
non-repetitive peak forward current
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
t = 8.3 ms half sinewave;
JEDEC method; note 1
Note
1. Only valid if pins 3 and 4 are connected in parallel.
MIN.
−
−
−
MAX.
20
1
8
UNIT
V
A
A
−65
+150
°C
−
125
°C
−65
+125
°C
2003 Aug 20
2