BUK7C08-55AITE Datasheet, PDF (4/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7C08-55AITE
N-channel TrenchPLUS standard level FET
120
P_der
(%)
80
03na19
150
ID
(A)
100
03no05
40
50 Capped at 75A due to package
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150 _{Tj (°C)} 200
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
RDSon = VDS / ID
102
Capped at 75 A due to package
DC
10
03nh48
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C08-55AITE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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