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| BUK7C08-55AITE Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7C08-55AITE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
VDGR
drain-gate voltage
RGS = 20 kâ¦
VGS
gate-source voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 2;
[1]
see Figure 3
[2]
Tmb = 100 °C; VGS = 10 V; see Figure 2
[2]
IDM
peak drain current
Tmb = 25 °C; tp ⤠10 µs; pulsed; see Figure 3
Ptot
total power dissipation Tmb = 25 °C; see Figure 1
IGS(CL)
gate-source clamping continuous
current
pulsed; tp = 5 ms; δ = 0.01
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
[2]
ISM
peak source current
Avalanche ruggedness
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ⤠55 V; RGS = 50 â¦; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
Electrostatic discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kâ¦
voltage
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min Max Unit
-
55
V
-
55
V
-20 20
V
-
130 A
-
75
A
-
75
A
-
522 A
-
272 W
-
10
mA
-
50
mA
-100 100 V
-55 175 °C
-55 175 °C
-
130 A
-
75
A
-
522 A
-
460 mJ
-
6
kV
BUK7C08-55AITE_2
Product data sheet
Rev. 02 â 17 February 2009
© NXP B.V. 2009. All rights reserved.
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