BUK7C08-55AITE Datasheet, PDF (11/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7C08-55AITE
N-channel TrenchPLUS standard level FET
600
ID/Isense
550
03no04
8
RD(Is)on
(mΩ)
6
03no03
500
4
450
2
400
4
8
12
16 _{VGS (V)} 20
0
4
8
12
16 _{VGS (V)} 20
Fig 17. Drain-sense current ratio as a function of gate
voltage; typical values
I_sense = 25 mA
Fig 18. Drain-ISENSE on-state resistance as function of
gate-source voltage; typical values
03no02
100
ID
(A)
75
50
25
0
0
175 °C
Tj = 25 °C
0.5
1 _{VSD (V)} 1.5
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values
BUK7C08-55AITE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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