BUK127-50DL Datasheet, PDF (4/11 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK127-50DL
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL PARAMETER
CONDITIONS
MIN.
Overload protection
-40˚C ≤ T_j ≤ 150˚C
I_D
Drain current limiting
V_IS = 5 V
0.8
V_IS = 4.5 V
0.7
V_IS = 4 V to 5.5 V
0.6
TYP.
1.3
-
-
MAX. UNIT
1.7 A
-
A
1.8 A
P_D(TO)
T_DSC
T_j(TO)
Short circuit load protection V_IS = 5 V
Overload power threshold
for protection to operate
-
17
-
W
Characteristic time
which determines trip time¹
-
1.6
-
ms
Overtemperature protection from I_D ≥ 280 mA or V_DS ≥ 100 mV
Threshold junction temperature V_IS = 4 V to 5.5 V
150 165 -
˚C
SWITCHING CHARACTERISTICS
T_a = 25˚C; resistive load R_L = 50 Ω; adjust V_DD to obtain I_D = 250 mA; refer to test circuit and waveforms
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
t_{d on}
Turn-on delay time
t_r
Rise time
t_{d off}
Turn-off delay time
t_f
Fall time
V_IS: 0 V ⇒ 5 V
V_IS: 5 V ⇒ 0 V
-
5
12 µs
-
11 30 µs
-
25 65 µs
-
14 35 µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
I_S
Continuous forward current
CONDITIONS
T_mb ≤ 25 ˚C; V_IS = 0 V
MIN.
-
MAX.
2
UNIT
A
REVERSE DIODE CHARACTERISTICS
Limits are for -40˚C ≤ T_mb ≤ 150˚C; typicals are for T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
V_SDO
Forward voltage
I_S = 2 A; V_IS = 0 V; t_p = 300 µs
-
t_rr
Reverse recovery time
not applicable²
-
TYP.
0.83
-
MAX. UNIT
1.1 V
-
-
1 Trip time t_{d sc} varies with overload dissipation P_D according to the formula t_{d sc} ≈ T_DSC / [ P_D / P_D(TO) - 1 ].
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
October 2001
4
Rev 1.011