English
Language : 

BUJ100LR Datasheet, PDF (4/11 Pages) NXP Semiconductors – Silicon diffused power transistor
◁
NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
Rth(j-lead)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 3
junction to lead
thermal resistance from
junction to ambient
102
Zth(j-lead)
(K/W)
10
BUJ100LR
Silicon diffused power transistor
Min Typ Max Unit
-
-
60
K/W
-
150 -
K/W
001aab451
1
10−1
P
δ = tp
T
10−2
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Fig 3. Transient thermal impedance from junction to lead as a function of pulse width
BUJ100LR_1
Product data sheet
Rev. 01 — 12 August 2009
© NXP B.V. 2009. All rights reserved.
4 of 11
 ▷