BUJ100LR Datasheet, PDF (1/11 Pages) NXP Semiconductors – Silicon diffused power transistor

BUJ100LR
Silicon diffused power transistor
Rev. 01 — 12 August 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO-92) 3 leads plastic package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability of 700 V
1.3 Applications
„ Compact fluorescent lamps (CFL)
„ Electronic lighting ballasts
„ Inverters
„ Off-line self-oscillating power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
I_C
collector current
P_tot
total power
dissipation
V_CESM collector-emitter
peak voltage
Static characteristics
h_FE
DC current gain
Conditions
DC; see Figure 1
T_lead ≤ 25 °C; see Figure 2
V_BE = 0 V
V_CE = 5 V; I_C = 0.8 A;
T_lead = 25 °C;
see Figure 8 and 9
Min Typ Max Unit
-
-
1
A
-
-
2.1 W
-
-
700 V
5
7.5 20