BFS20W Datasheet, PDF (4/7 Pages) NXP Semiconductors – NPN medium frequency transistor

NXP Semiconductors
NPN medium frequency transistor
10³
handbook, halfpage
hFE
(1)
10²
(2)
(3)
10
MGR830
10³
handbook, halfpage
VCEsat
(mV)
10²
Product data sheet
BFS20W
MGR831
(1)
(2)
(3)
1
10^−1
1
10 _{IC (mA)} 10²
V_CE = 10 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
10
10^−1
1
10 _{IC (mA)} 10²
I_C/I_B = 10.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.3 Collector-emitter saturation voltage as a
function of collector current; typical values.
1000
handbook, halfpage
VBE
(1)
(mV)
800
(2)
600
(3)
400
MGR832
200
10^−1
1
V_CE = 10 V.
(1) T_amb = −100 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10 _{IC (mA)} 10²
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
handbook,²h⁵alfpage
IC
(1)
(mA)
20
(2)
(3)
15
(4)
10
(5)
MGR833
5
(6)
0
0
2
T_amb = 25 °C.
(1) I_B = 280 µA.
(2) I_B = 230 µA.
(3) I_B = 180 µA.
4
6
8
10
VCE (V)
(4) I_B = 130 µA.
(5) I_B = 80 µA.
(6) I_B = 30 µA.
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
1999 Apr 21
4