BFS20W Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN medium frequency transistor

NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS20W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_BE
base-emitter voltage
C_c
collector capacitance
C_re
feedback capacitance
f_T
transition frequency
CONDITIONS
I_E = 0; V_CB = 20 V
I_E = 0; V_CB = 20 V; T_j = 100 °C
I_C = 0; V_EB = 4 V
I_C = 7 mA; V_CE = 10 V
I_C = 7 mA; V_CE = 10 V
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
I_C = 0; V_CE = 10 V; f = 1 MHz
I_C = 5 mA; V_CE = 10 V; f = 100 MHz
VALUE
625
UNIT
K/W
MIN.
−
−
−
40
−
−
−
360
TYP.
−
−
−
85
740
1
350
470
MAX. UNIT
100 nA
10
µA
100 nA
−
900 mV
−
pF
−
fF
−
MHz
1999 Apr 21
3