BFS20W Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN medium frequency transistor

NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS20W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V).
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
MARKING
TYPE NUMBER
BFS20W
MARKING CODE⁽¹⁾
N1∗
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
2
MAM062
Fig.1 Simplified outline (SOT323; SC-70) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
20
4
25
25
200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 21
2