PSMN1R5-30YL Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R5-30YL
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
I_DM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1 ^[1]
V_GS = 10 V; T_mb = 25 °C; see Figure 1 ^[1]
t_p ≤ 10 µs; pulsed; T_mb = 25 °C;
see Figure 4
Min Typ Max Unit
-
-
30 V
-
-
30 V
-20 -
20 V
-
-
100 A
-
-
100 A
-
-
790 A
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
-
-
-55 -
-55 -
109 W
175 °C
175 °C
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[1]
-
-
100 A
-
-
790 A
E_DS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[2][3][4] _-
-
-
J
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped
-
-
241 mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
PSMN1R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
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