PSMN1R5-30YL Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK

PSMN1R5-30YL
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Rev. 01 — 9 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Advanced TrenchMOS provides low
RDSon and low gate charge
 High efficiency gains in switching
power convertors
 Improved mechanical and thermal
characteristics
 LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
 DC-to-DC converters
 Lithium-ion battery protection
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; see ^[1]
Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
T_j
junction
temperature
Static characteristics
R_DSon
drain-source
on-state
resistance
Dynamic characteristics
V_GS = 10 V; I_D = 15 A;
T_j = 100 °C; see Figure 14
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C
Q_GD
gate-drain charge V_GS = 4.5 V; I_D = 10 A;
V_DS = 12 V; see Figure 15; see
Figure 16
Min Typ Max Unit
-
-
30 V
-
-
100 A
-
-
109 W
-55 -
175 °C
-
-
2.4 mΩ
-
1.3 1.5 mΩ
-
8.7 -
nC