PRTR5V0U8S Datasheet, PDF (3/7 Pages) NXP Semiconductors – Integrated octal low-capacity ESD protection to IEC 61000-4-2 level 4

NXP Semiconductors
PRTR5V0U8S
Integrated octal low-capacity ESD protection
5. Recommended operating conditions
Table 5.
Symbol
T_amb
Operating conditions
Parameter
ambient temperature
Conditions
Min Typ Max Unit
−40 -
+85 °C
6. Characteristics
Table 6. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Protection diodes
C_(I/O-GND) input/output to ground
capacitance
V_I = 0 V; f = 1 MHz; V_CC = 3 V
I_LR
reverse leakage current
Zener diode
V_I = 3 V
V_BR
breakdown voltage
C_sup
supply pin to ground
capacitance
I_I = 1 mA
V_I = 0 V; f = 1 MHz; V_CC = 3 V
V_F
forward voltage
[1] Measured from pin 1, 2, 4, 5, 6, 7, 9 and 10 to ground
[2] Measured from pin 8 to ground
Min
Typ
Max Unit
[1] _-
1.0
-
pF
[1] _-
-
100
nA
[2] ₆
-
9
V
[2] _-
30
-
pF
-
0.7
-
V
PRTR5V0U8S_1
Preliminary data sheet
Rev. 01 — 14 January 2008
© NXP B.V. 2008. All rights reserved.
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