TDA8920C_09 Datasheet, PDF (2/39 Pages) NXP Semiconductors – 2 ´ 110 W class-D power amplifier

NXP Semiconductors
TDA8920C
2 × 110 W class-D power amplifier
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
General, V_P[1] = ±30 V
V_P
supply voltage
V_P(ovp) overvoltage protection supply voltage
I_q(tot) total quiescent current
Operating mode
Standby, Mute modes; V_DD − V_SS
Operating mode; no load; no filter; no
RC-snubber network connected
Stereo single-ended configuration
P_o
output power
T_j = 85 °C; L_LC = 22 µH; C_LC = 680 nF
(see Figure 10)
Mono bridge-tied load configuration
THD + N = 10 %; R_L = 4 Ω;
V_P = ±30 V
THD + N = 10 %; R_L = 4 Ω;
V_P = ±27 V
P_o
output power
T_j = 85 °C; L_LC = 22 µH; C_LC = 680 nF
(see Figure 10); R_L = 8 Ω;
THD + N = 10 %; V_P = ±30 V
[1] V_P is the supply voltage on pins VDDP1, VDDP2 and VDDA.
[2] The circuit is DC adjusted at V_P = ±12.5 V to ±32.5 V.
[3] Output power is measured indirectly; based on R_DSon measurement; see Section 13.3.
Min Typ
[2] _{±12.5 ±30}
65 -
-
50
[3] _-
110
-
90
[3] _-
220
Max Unit
±32.5 V
70 V
75 mA
-
W
-
W
-
W
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
TDA8920CJ
DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1
TDA8920CTH
HSOP24 plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
TDA8920C_2
Product data sheet
Rev. 02 — 11 June 2009
© NXP B.V. 2009. All rights reserved.
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